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Si4814BDY
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Dynamic a
Turn-On Delay Time
Rise Time
t d(on)
t r
Channel-1
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
8
9
11
13
15
15
18
20
Turn-Off Delay Time
t d(off)
Channel-2
V DD = 15 V, R L = 15 Ω
Ch-1
Ch-2
21
27
32
40
ns
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t f
t rr
Q rr
t a
t b
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
I F = 1.3 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 μA/μs
I F = 1.3 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 μA/μs
I F = 1.3 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 μA/μs
I F = 1.3 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 μA/μs
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
6
9
28
24
17
12
12
11
16
13
10
15
40
35
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
SCHOTTKY SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V F
Test Conditions
I F = 1.0 A
I F = 1.0 A, T J = 125 °C
Min.
Typ.
0.47
0.36
Max.
0.50
0.42
Unit
V
V R = 30 V
0.004
0.100
Maximum Reverse Leakage Current
I rm
V R = 30 V, T J = 100 °C
0.7
10
mA
V R = - 30 V, T J = 125 °C
3.0
20
Junction Capacitance
C T
V R = 10 V
50
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73278
S09-0394-Rev. C, 09-Mar-09
www.vishay.com
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